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| SI4966DY Vishay Siliconix Dual N-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) 0.025 @ VGS = 4.5 V 0.035 @ VGS = 2.5 V ID (A) "7.1 "6.0 D1 D1 D2 D2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View S1 N-Channel MOSFET S2 N-Channel MOSFET 8 7 6 5 D1 D1 D2 D2 G1 G2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a 150 C) Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C ID TA = 70_C IDM IS PD TJ, Tstg Symbol VDS VGS Limit 20 "12 "7.1 "5.7 "40 1.7 2 Unit V A W 1.3 -55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70718 S-54939--Rev. A, 29-Sep-97 www.vishay.com S FaxBack 408-970-5600 Symbol RthJA Limit 62.5 Unit _C/W 2-1 SI4966DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "12 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 7.1 A VGS = 2.5 V, ID = 6.0 A VDS = 10 V, ID = 7.1 A IS = 1.7 A, VGS = 0 V 20 0.019 0.025 27 1.2 0.025 W 0.035 S V 0.6 "100 1 5 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = 1.7 A, di/dt = 100 A/ms VDD = 10 V, RL = 10 W V, ID ^ 1 A, VGEN = 4 5 V RG = 6 W A 4.5 V, VDS = 10 V, VGS = 4 5 V ID = 7.1 A V 4.5 V, 71 25 6.5 4 40 40 90 40 40 60 60 150 60 80 ns 50 nC C Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com S FaxBack 408-970-5600 2-2 Document Number: 70718 S-54939--Rev. A, 29-Sep-97 SI4966DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 40 VGS = 5 thru 3 V 2.5 V 30 I D - Drain Current (A) I D - Drain Current (A) 30 40 Transfer Characteristics 20 2V 10 20 TC = 125_C 10 25_C 1, 1.5 V 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 0 0.5 1.0 1.5 -55_C 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.10 4000 Capacitance r DS(on)- On-Resistance ( W ) 0.08 C - Capacitance (pF) 3200 Ciss 2400 0.06 0.04 VGS = 2.5 V 0.02 VGS = 4.5 V 1600 Coss 800 Crss 0 0 10 20 ID - Drain Current (A) 30 40 0 0 4 8 12 16 20 VDS - Drain-to-Source Voltage (V) 5 VDS = 10 V ID = 7.1 A V GS - Gate-to-Source Voltage (V) Gate Charge 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 7.1 A 3 r DS(on)- On-Resistance ( W ) (Normalized) 0 5 10 15 20 25 4 1.4 1.2 2 1.0 1 0.8 0 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Document Number: 70718 S-54939--Rev. A, 29-Sep-97 www.vishay.com S FaxBack 408-970-5600 2-3 SI4966DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 40 0.10 ID = 7.1 A TJ = 150_C 10 TJ = 25_C r DS(on)- On-Resistance ( W ) 0.08 On-Resistance vs. Gate-to-Source Voltage I S - Source Current (A) 0.06 0.04 0.02 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.4 30 Single Pulse Power 0.2 V GS(th) Variance (V) ID = 250 mA 24 -0.2 Power (W) -0.0 18 12 -0.4 6 -0.6 -50 -25 0 25 50 75 100 125 150 0 0.01 0.10 1.00 Time (sec) 10.00 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 PDM t1 t2 1. Duty Cycle, D = t1 t2 0.02 Single Pulse 0.01 10-4 10-3 10-2 S W Pl 10-1 D ti ( ) 1 2. Per Unit Base = RthJA = 62.5_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 30 www.vishay.com S FaxBack 408-970-5600 2-4 Document Number: 70718 S-54939--Rev. A, 29-Sep-97 |
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